SKM200GAL17E4 ? by semikron rev. 1 C 01.04.2015 1 semitrans ? 3 gal igbt4 modules SKM200GAL17E4 features igbt4 = 4. generation medium fast trench igbt (infineon) cal4 = soft switching 4. generation cal-diode insulated copper baseplate using dbc technology (direct copper bonding) with integrated gate resistor for switching frequenzies up to 8khz ul recognized, file no. e63532 typical applications* dc/dc C converter brake chopper switched reluctance motor remarks case temperature limited to t c = 125c max. recommended t op = -40 ... +150c product reliability results valid for t j = 150c absolute maximum ratings symbol conditions values unit igbtv ces t j =25c 1700 v i c t j = 175 c t c =25c 321 a t c =80c 248 a i cnom 200 a i crm i crm = 3xi cnom 600 a v ges -20 ... 20 v t psc v cc = 1000 v v ge 15 v v ces 1700 v t j =150c 10 s t j -40 ... 175 c inverse diode i f t j = 175 c t c =25c 213 a t c =80c 157 a i fnom 200 a i frm i frm = 2xi fnom 400 a i fsm t p = 10 ms, sin 180, t j =25c 1170 a t j -40 ... 175 c freewheeling diode i f t j = 175 c t c =25c 213 a t c =80c 157 a i fnom 200 a i frm i frm = 2xi fnom 400 a i fsm t p = 10 ms, sin 180, t j =25c 1170 a t j -40 ... 175 c module i t(rms) 500 a t stg -40 ... 125 c v isol ac sinus 50 hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbtv ce(sat) i c =200a v ge =15v chiplevel t j =25c 1.90 2.20 v t j =150c 2.30 2.60 v v ce0 chiplevel t j =25c 0.8 0.9 v t j =150c 0.7 0.8 v r ce v ge =15v chiplevel t j =25c 5.50 6.50 m t j =150c 8.00 9.00 m v ge(th) v ge =v ce , i c = 8 ma 5.2 5.8 6.4 v i ces v ge =0v v ce = 1700 v t j =25c 2.7 ma t j =150c ma c ies v ce =25v v ge =0v f=1mhz 18 nf c oes f=1mhz 0.68 nf c res f=1mhz 0.58 nf q g v ge = - 8 v...+ 15 v 1600 nc r gint t j =25c 3.8
SKM200GAL17E4 2 rev. 1 C 01.04.2015 ? by semikron t d(on) v cc = 1200 v i c =200a v ge = +15/-15 v r g on =2 r g off =2 di/dt on = 6830 a/s di/dt off =1120a/s du/dt = 5250 v/s t j =150c 259 ns t r t j =150c 35 ns e on t j =150c 69 mj t d(off) t j =150c 712 ns t f t j =150c 149 ns e off t j =150c 79 mj r th(j-c) per igbt 0.122 k/w inverse diode v f = v ec i f = 200 a v ge =0v chiplevel t j =25c 2.00 2.40 v t j =150c 2.15 2.57 v v f0 chiplevel t j =25c 1.32 1.56 v t j =150c 1.08 1.22 v r f chiplevel t j =25c 3.4 4.2 m t j =150c 5.4 6.8 m i rrm i f = 200 a di/dt off =5910a/s v ge =15v v cc = 1200 v t j =150c 272 a q rr t j =150c 63 c e rr t j =150c 45 mj r th(j-c) per diode 0.276 k/w freewheeling diode v f = v ec i f = 200 a v ge =0v chiplevel t j =25c 2.00 2.40 v t j =150c 2.15 2.57 v v f0 chiplevel t j =25c 1.32 1.56 v t j =150c 1.08 1.22 v r f chiplevel t j =25c 3.4 4.2 m t j =150c 5.4 6.8 m i rrm i f = 200 a di/dt off =5910a/s v ge =15v v cc = 1200 v t j =150c 272 a q rr t j =150c 63 c e rr t j =150c 45 mj r th(j-c) per diode 0.276 k/w module l ce 15 nh r cc'+ee' terminal-chip t c =25c 0.55 m t c =125c 0.85 m r th(c-s) per module 0.02 0.038 k/w m s to heat sink m6 3 5 nm m t to terminals m6 2.5 5 nm nm w 325 g characteristics symbol conditions min. typ. max. unit semitrans ? 3 gal igbt4 modules SKM200GAL17E4 features igbt4 = 4. generation medium fast trench igbt (infineon) cal4 = soft switching 4. generation cal-diode insulated copper baseplate using dbc technology (direct copper bonding) with integrated gate resistor for switching frequenzies up to 8khz ul recognized, file no. e63532 typical applications* dc/dc C converter brake chopper switched reluctance motor remarks case temperature limited to t c = 125c max. recommended t op = -40 ... +150c product reliability results valid for t j = 150c
SKM200GAL17E4 ? by semikron rev. 1 C 01.04.2015 3 fig. 1: typ. output characteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
SKM200GAL17E4 4 rev. 1 C 01.04.2015 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching ti mes vs. gate resistor r g fig. 9: transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ ee' fig. 11: cal diode peak reverse recovery current fig. 12: typ. cal diode peak reverse recovery charge
SKM200GAL17E4 ? by semikron rev. 1 C 01.04.2015 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may no t be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. the use of semikron produc ts in life support appliances and syste ms is subject to prior specification and written approval by semikron. we therefore strongly recommend prior consultation of our staf f. semitrans 3 gal
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